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AUIRGP50B60PD1E

Part No AUIRGP50B60PD1E
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 75A 390W TO247AD
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 75A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 2.85V @ 15V, 50A
Maximum Power Dissipation 390W
Total Switching Energy(Ets) 255μJ (on), 375μJ (off)
Input Type Standard
Gate Charge 205nC
Turn-on and Turn-off delay time 30ns/130ns
Testing Conditions 390V, 33A, 3.3 Ohm, 15V
Reverse Recovery Time (trr) 42ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD
Win Source Part Number 1020797-AUIRGP50B60PD1E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AUIRGP50B60PD1E CAD Model

Description

The AUIRGP50B60PD1E is an IGBT transistor from Infineon Technologies.

  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 75A
  • Reverse Recovery Time: 42ns
  • Gate Charge: 205nC
  • Package: TO-247AD
  • Packaging: Tube/Rail
  • Ideal for: Power Electronics Applications

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