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Same model may have multiple batches, images only for reference.
AUIRLR2905Z Infineon Technologies
Same model may have multiple batches, images only for reference.

AUIRLR2905Z

Part No AUIRLR2905Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A DPAK
Datasheet
AUIRLR2905Z Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 35nC @ 5V
Max Input Capacitance 1570pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 13.5 mOhm @ 36A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1020812-AUIRLR2905Z
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian AUIRLR2905Z CAD Model

Description

The Infineon Technologies AUIRLR2905Z is an N-channel MOSFET designed for use in a wide range of applications in the electronics industry.

  • Power Dissipation: 110W
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 42A
  • Gate Charge: 35nC @ 5V
  • Package: D-Pak
  • Rds On @ Id,Vgs: 13.5 mOhm @ 36A and 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,303 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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