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Same model may have multiple batches, images only for reference.
AUIRLR3636TRL International Rectifier
Same model may have multiple batches, images only for reference.

AUIRLR3636TRL

Part No AUIRLR3636TRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description AUTOMOTIVE HEXFET N-CHANNEL
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Rds On (Max) @ Id, Vgs 6.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds 3779 pF @ 50 V
Power Dissipation (Max) 143W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number AUIRLR3636
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 567239-AUIRLR3636TRL
Ultra Librarian 3D Model Ultra Librarian AUIRLR3636TRL CAD Model

Description

The AUIRLR3636TRL is a N-Channel MOSFET designed for use in a variety of applications.

  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 50A @ 25°C
  • Maximum On-Resistance: 6.8mOhm @ 50A and 10V
  • Gate Threshold Voltage: 2.5V @ a current of 100µA
  • Power Dissipation: 143W @ a case temperature of 25°C
  • Package: TO-252-3, DPak
  • Mounting: surface mount applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8099 $63.3465
80+ $1.4853 $118.8240
125+ $1.4391 $179.8875
170+ $1.3929 $236.7930
215+ $1.3467 $289.5405
290+ $1.2070 $350.0300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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