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Same model may have multiple batches, images only for reference.
AUIRLS3114Z Real Image
Same model may have multiple batches, images only for reference.

AUIRLS3114Z

Part No AUIRLS3114Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 42A D2PAK
Datasheet
AUIRLS3114Z Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.5V @ 100μA
Max Gate Charge 53nC @ 4.5V
Max Input Capacitance 3617pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 143W (Tc)
Maximum Rds On at Id,Vgs 4.9 mOhm @ 56A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-PAK (TO-252AA)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1020820-AUIRLS3114Z
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian AUIRLS3114Z CAD Model

Description

The Infineon Technologies AUIRLS3114Z is a MOSFET transistor with an N-Channel polarity and a maximum power dissipation of 143W (Tc).

  • Drive Voltage: 10V
  • Mounting Type: SMD (SMT)
  • Maximum Rds On: 4.9 mOhm @ 56A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 100μA
  • Maximum Gate Charge: 53nC @ 4.5V
  • Maximum Input Capacitance: 3617pF @ 25V
  • Maximum Gate-Source Voltage: ±16V
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 56A (Tc) @ 25°C
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Balanced

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