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Same model may have multiple batches, images only for reference.
BC817K40WE6327 Infineon Technologies
Same model may have multiple batches, images only for reference.

BC817K40WE6327

Part No BC817K40WE6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description BIPOLAR GEN PURPOSE TRANSISTOR / Bipolar (BJT) Transistor 45 V 500 mA 170MHz 500 mW Surface Mount PG-SOT323-3-1
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Infineon Technologies
Series Automotive, AEC-Q101
Package Bulk
Product Status Active
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V
Power - Max 500 mW
Frequency - Transition 170MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package PG-SOT323-3-1
Base Product Number BC817
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1161239-BC817K40WE6327
Ultra Librarian 3D Model Ultra Librarian BC817K40WE6327 CAD Model

Description

The BC817K40WE6327 is a single bipolar transistor from Infineon Technologies.

  • Category: Discrete Semiconductor Products, Automotive Applications
  • Maximum Power: 500 mW
  • Collector-Emitter Breakdown Voltage: 45V
  • Maximum Collector Current: 500mA
  • Vce Saturation: 700mV @ 50mA, 500mA
  • DC Current Gain: 250 @ 100mA, 1V
  • Transition Frequency: 170MHz
  • Package Type: SC-70, SOT-323 (Surface Mount)
  • Status: Active

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