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Same model may have multiple batches, images only for reference.
BC858CE6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BC858CE6327HTSA1

Part No BC858CE6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS PNP 30V 0.1A SOT-23
Datasheet
BC858CE6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 650mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 420 @ 2mA, 5V
Maximum Power Dissipation 330mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 1022523-BC858CE6327HTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BC858CE6327HTSA1 CAD Model

Description

The Infineon Technologies BC858CE6327HTSA1 is a PNP transistor.

  • Transistor Type: PNP
  • Maximum Collector-Emitter Breakdown Voltage: 30V
  • Maximum Current Collector: 100mA
  • Frequency Transition: 250MHz
  • Typical Gain (hFE): 420 @ 2mA and 5V
  • Package: PG-SOT23-3
  • Operating Temperature Range: Up to 150°C (TJ)
  • Maximum Power Dissipation: 330mW
  • Supply and Demand: Sufficient

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