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Same model may have multiple batches, images only for reference.
BCP52-16 E6327 Real Image
Same model may have multiple batches, images only for reference.

BCP52-16 E6327

Part No BCP52-16 E6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 1A SOT-223
Datasheet
BCP52-16 E6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 500mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 150mA, 2V
Maximum Power Dissipation 2W
Frequency - Transition 125MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Win Source Part Number 200832-BCP52-16 E6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCP52-16 E6327 CAD Model

Description

Product Overview

The BCP52-16 E6327 is a high-performance PNP Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. Its superior efficiency and reliability make it a preferred choice for hobbyists and professionals alike.

Applications

  • Audio Amplifiers
  • Switching Circuits
  • Signal Amplification

Features and Benefits

  • High Current Gain: Ensures efficient signal amplification.
  • Low Collector-Emitter Saturation Voltage: Minimizes power loss.
  • Compact Package: Fits easily into circuit designs.

Additional Details

With excellent thermal stability and robust construction, the BCP52-16 E6327 provides long-term performance in various temperature conditions, making it suitable for diverse geographic regions.

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