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Same model may have multiple batches, images only for reference.
BCR 191F E6327 Infineon Technologies
Same model may have multiple batches, images only for reference.

BCR 191F E6327

Part No BCR 191F E6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 250MW TSFP-3
Datasheet
BCR 191F E6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 50 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package PG-TSFP-3
Win Source Part Number 1022710-BCR 191F E6327
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Lighting, LED Lighting
Ultra Librarian 3D Model Ultra Librarian BCR 191F E6327 CAD Model

Description

The Infineon Technologies BCR 191F E6327 is a PNP-pre-biased transistor with a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V.

  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 250mW
  • Typical Gain (hFE): 50 @ 5mA, 5V
  • Category: Discrete Semiconductor Product
  • Status: Obsolete (EOL)
  • Package: PG-TSFP-3
  • Popularity: Medium
  • Application: Lighting and LED lighting

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