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Same model may have multiple batches, images only for reference.
BCR 519 E6327 Infineon Technologies
Same model may have multiple batches, images only for reference.

BCR 519 E6327

Part No BCR 519 E6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 300MW SOT23-3
Datasheet
BCR 519 E6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Typical Gain (hFE) (Min) 120 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 100MHz
Maximum Power Dissipation 330mW
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 1022733-BCR 519 E6327
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Lighting, LED Lighting
Ultra Librarian 3D Model Ultra Librarian BCR 519 E6327 CAD Model

Description

The BJT is a transistor from Infineon Technologies designed for use in discrete semiconductor products.

  • Mounting: SMD (SMT)
  • Package: PG-SOT23-3
  • Maximum Current Collector: 500mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 300mV @ 2.5mA, 50mA
  • Typical Gain (hFE) (Min): 120 @ 50mA, 5V
  • Status: obsolete (EOL)
  • Supply and Demand Status: balanced
  • Applications: lighting and LED lighting

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