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BCR112W E6327

Part No BCR112W E6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 250MW SOT323-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 20 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 140MHz
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package PG-SOT323-3
Win Source Part Number 200851-BCR112W E6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCR112W E6327 CAD Model

Description

Overview

The BCR112W E6327 digital transistor features an integrated resistor network, offering a convenient and efficient solution for switching and current driving applications.

Applications

  • Switching circuits
  • Signal amplification
  • Relay drivers
  • Logic buffer applications
  • Consumer electronics

Features

  • Built-in resistors for biasing
  • Compact SMD package
  • Efficient at low power consumption
  • Fast switching performance
  • Environmentally friendly (RoHS compliant)

Benefits

  • Reduced space requirement on PCB
  • Decreased design complexity
  • Lower production costs
  • Enhanced circuit reliability

Additional Details

The BCR112W E6327 is an ideal choice for designers seeking to optimize space and production cost while maintaining reliable performance in electronic systems.

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Shipping Information

Shipped from HK warehouse
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