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BCR114F

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Part No	BCR114F
Manufacturer	Infineon Technologies
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	TRANS PREBIAS NPN 250MW TSFP-3
Datasheet	BCR114F Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Obsolete(EOL)
Transistor Polarity	NPN - Pre-Biased
Maximum Current Collector	100mA
VCEO Maximum Collector-Emitter Breakdown Voltage	50V
Resistor - Base (R1) (Ohms)	4.7k
Resistor - Emitter Base (R2) (Ohms)	10k
Typical Gain (hFE) (Min)	30 @ 5mA, 5V
Max Vce (sat)	300mV @ 500μA, 10mA
Collector Cut-off Current(Max)	100nA (ICBO)
Frequency - Transition	160MHz
Maximum Power Dissipation	250mW
Mounting	SMD (SMT)
Case / Package	PG-TSFP-3
Win Source Part Number	039580-BCR114F
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian BCR114F CAD Model

Alternative Products

Description

BCR114F

The BCR114F is a high-performance bipolar junction transistor (BJT) suitable for a variety of electronic applications. Designed to provide efficient switching and amplifying capabilities, this compact component is ideal for integration into complex circuits where space and performance are critical.

Key Features:
- High current gain
- Low saturation voltage
- Compact SOT-23 package
Applications:
- General-purpose switching
- Signal amplification
- Consumer electronics projects
Benefits:
- Reliable performance in demanding environments
- Energy-efficient solution

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