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Same model may have multiple batches, images only for reference.
HAT2160H-E Real Image
Same model may have multiple batches, images only for reference.

HAT2160H-E

Part No HAT2160H-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 60A LFPAK
Datasheet
HAT2160H-E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 54nC @ 4.5V
Max Input Capacitance 7750pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 2.6 mOhm @ 30A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 040427-HAT2160H-E
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HAT2160H-E CAD Model

Description

The Renesas Electronics America HAT2160H-E is a medium popularity electronic component that has limited supply and demand status.

  • Popularity: Medium
  • Supply and Demand: Limited
  • Technology: MOSFET
  • Polarity: N-channel
  • Power Dissipation: 30W (Tc)
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.3370 $60.7180
33+ $3.5586 $117.4338
51+ $3.4477 $175.8327
70+ $3.3368 $233.5760
90+ $3.2248 $290.2320
120+ $2.8921 $347.0520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,000 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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