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Same model may have multiple batches, images only for reference.
BCR35PN-E6433 Real Image
Same model may have multiple batches, images only for reference.

BCR35PN-E6433

Part No BCR35PN-E6433
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description Trans Npn/pnp Prebias SOT363
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-363-6
Collector Emitter Breakdown Voltage 50 V
Collector Emitter Voltage (VCEO) 50 V
Current Rating 100 mA
Element Configuration Dual
hFE Min 70
Lead Free Yes
Max Collector Current 100 mA
Maximum Operating Temperature 150 °C
Max Power Dissipation 250 mW
Min Operating Temperature -65 °C
Mount Surface Mount
Number of Pins 6
Packaging Tape and Reel
Polarity NPN, PNP
RoHS Compliant
Transition Frequency 150 MHz
Voltage Rating (DC) 50 V
Win Source Part Number 1048899-BCR35PN-E6433
Categories RF Transistors(BJT)
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BCR35PN-E6433 CAD Model

Description

The Infineon Technologies BCR35PN-E6433 RF transistor is a dual element configuration device with a collector-emitter breakdown voltage of 50V and a collector-emitter voltage of 50V.

  • Maximum Power Dissipation: 250mW
  • Maximum Collector Current: 100mA
  • Package: SOT-363-6 case
  • Temperature Range: -65°C to 150°C
  • Popularity: low popularity
  • Fake Threat: 49% threat of fake products in the open market
  • Supply and Demand Status: currently experiencing a shortage

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