The BCV48H6327 is a single NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is designed for general-purpose amplification and switching applications. This transistor offers a good balance of current gain and voltage handling capabilities, making it suitable for various electronic circuits.

Applications

• General purpose amplification
• Switching circuits
• Driver stages
• Linear amplification
• Signal processing

Features

• NPN polarity
• Low collector-emitter saturation voltage
• High current gain (hFE)
• Small signal amplification
• High transition frequency
• RoHS compliant

Benefits

• Efficient amplification due to high current gain
• Reliable switching performance due to low saturation voltage
• Easy integration into various circuit designs
• Wide operating temperature range
• Improved circuit efficiency and performance

Technical Specifications

The BCV48H6327 features a collector-emitter voltage (VCEO) typically around 30V, a collector current (IC) of approximately 100mA, and a power dissipation (Ptot) rating of around 250mW. The DC current gain (hFE) typically ranges from 100 to 300, depending on the specific operating conditions. The transition frequency (fT) is typically around 100 MHz. It is available in a SOT-23 package, suitable for surface mount technology (SMT) assembly.