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Same model may have multiple batches, images only for reference.
BCW67BE6327 Real Image
Same model may have multiple batches, images only for reference.

BCW67BE6327

Part No BCW67BE6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description SMALL SIGNAL BIPOLAR TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Infineon Technologies
Series Automotive, AEC-Q101
Package Bulk
Product Status Active
Current - Collector (Ic) (Max) 800 mA
Voltage - Collector Emitter Breakdown (Max) 32 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V
Power - Max 330 mW
Frequency - Transition 200MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23-3-1
Standard Package 5,495 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 713747-BCW67BE6327
Ultra Librarian 3D Model Ultra Librarian BCW67BE6327 CAD Model

Description

The 713747-BCW67BE6327 is a single bipolar transistor designed for use in automotive applications.

  • Power Rating: 330 mW
  • Collector-Emitter Breakdown Voltage: 32V
  • Collector Current: 800 mA (Maximum)
  • DC Current Gain: 160 @ 100mA and 1V
  • Operating Frequency: 200MHz
  • Mounting Type: Surface mount
  • Supplier Device Package: PG-SOT23-3-1
  • Manufacturer: Infineon Technologies
  • Product Status: Active

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