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Same model may have multiple batches, images only for reference.
BCW68FE6327HTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BCW68FE6327HTSA1

Part No BCW68FE6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS PNP 45V 0.8A SOT-23 / rans GP BJT PNP 45V 0.8A 330mW Automotive 3-Pin SOT-23 T/R
Datasheet
BCW68FE6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel package
Transistor Type PNP
Current - Collector (Ic) (Maximum) 800mA
Voltage - Collector Emitter Breakdown (Maximum) 45V
Vce Saturation (Maximum) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Maximum) 20nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 100 @ 100mA, 1V
Power - Max 330mW
Frequency - Transition 200MHz
Operating Temperature Range 150°C (TJ)
Mounting SMD
Package TO-236-3, SC-59, SOT-23-3
Manufacturer Package PG-SOT23-3
Win Source Part Number 769812-BCW68FE6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Family Name BCW68F
Introduction Date May 01, 1991
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian BCW68FE6327HTSA1 CAD Model

Description

The Infineon Technologies BCW68FE6327HTSA1, manufactured by Infineon Technologies, is a PNP transistor.

  • Maximum Power: 330mW
  • Frequency Transition: 200MHz
  • DC Current Gain (hFE): 100 @ 100mA, 1V
  • Package: TO-236-3, SC-59, SOT-23-3
  • Manufacturer Package: PG-SOT23-3
  • Maximum Collector Emitter Breakdown Voltage: 45V
  • Vce Saturation: 700mV @ 50mA, 500mA
  • Popularity: Medium

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