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BDP949E6327HTSA1

Part No BDP949E6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS NPN 60V 3A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 500mV @ 200mA, 2A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 500mA, 1V
Maximum Power Dissipation 5W
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Win Source Part Number 143706-BDP949E6327HTSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BDP949E6327HTSA1 CAD Model

Description

BDP949E6327HTSA1 Enhanced Diode

The BDP949E6327HTSA1 diode offers enhanced features for specialized applications, providing superior performance in temperature-sensitive environments.

  • Features and Benefits:
    • Enhanced temperature stability
    • Superior efficiency and durability
    • Compact form factor
  • Applications/Projects:
    • Advanced power regulation
    • Temperature-critical circuits
    • High-precision rectification
  • Additional Details:This diode is ideal for projects requiring precise and reliable performance under varying thermal conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8166 $61.2450
175+ $0.6699 $117.2325
270+ $0.6491 $175.2570
370+ $0.6283 $232.4710
480+ $0.6075 $291.6000
640+ $0.5440 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 99,900 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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