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BF 2030R E6814

Part No BF 2030R E6814
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet N-ch 8V 40MA SOT-143R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-143
Continuous Drain Current (ID) 40 mA
Current Rating 40 mA
Drain to Source Voltage (Vdss) 8 V
Frequency 800 MHz
Gain 23 dB
Gate to Source Voltage (Vgs) 6 V
Height 1 mm
Input Capacitance 2.8 pF
Lead Free Yes
Length 2.9 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 200 mW
Min Operating Temperature -55 °C
Mount Surface Mount
Noise Figure 1.5 dB
Number of Pins 4
Packaging Tape & Reel
RoHS Compliant
Test Current 10 mA
Test Voltage 5 V
Voltage Rating 8 V
Voltage Rating (DC) 8 V
Width 1.3 mm
Win Source Part Number 1018674-BF 2030R E6814
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BF 2030R E6814 CAD Model

Description

The BF 2030R E6814 is a silicon N-channel MOSFET designed for radio frequency (RF) applications. Manufactured by Infineon Technologies, this transistor is optimized for low noise and high gain performance in various RF front-end circuits.

Applications

  • Low Noise Amplifiers (LNAs) for GPS, mobile communication, and satellite receivers.
  • RF front-end circuits in mobile phones and other wireless devices.
  • Oscillators and mixers in RF communication systems.
  • Satellite TV tuners and terrestrial TV tuners.
  • General-purpose RF amplification.

Features

  • Low Noise Figure: Optimized for minimal noise contribution, ensuring high sensitivity in receiver applications.
  • High Gain: Provides significant signal amplification, improving the overall performance of RF circuits.
  • High Transition Frequency (fT): Enables operation at high frequencies, suitable for modern RF communication standards.
  • Low Input Capacitance: Minimizes signal loading and improves impedance matching.
  • Small Package: Typically available in small surface-mount packages for compact designs.
  • Pb-free and RoHS compliant: Environmentally friendly construction.

Benefits

  • Improved Receiver Sensitivity: The low noise figure enhances the ability to detect weak signals, resulting in better receiver performance.
  • Increased Signal Strength: The high gain amplifies the received signal, improving the signal-to-noise ratio.
  • Compact Design: The small package allows for integration into space-constrained applications.
  • Extended Battery Life: Optimized for low power consumption in mobile devices.
  • Reliable Performance: Designed for stable and reliable operation in demanding RF environments.

Additional Details

The BF 2030R E6814 operates with a low gate voltage, simplifying biasing and control circuitry. Proper impedance matching is crucial for optimal performance. It typically requires external matching networks to achieve the desired gain and noise figure. Refer to the Infineon datasheet for detailed specifications, including S-parameters, noise parameters, and application circuits. The E6814 suffix indicates a specific tape and reel packaging for automated assembly.

Note: It is essential to consult the official Infineon Technologies datasheet for the most accurate and up-to-date specifications and application recommendations. Operating parameters may vary depending on the specific application and operating conditions.

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