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BFR183WE6327

Part No BFR183WE6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description Trans RF BJT NPN 12V 0.065A 450mW Automotive 3-Pin SOT-323 T/R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family RF Transistors(BJT)
Manufacturer Infineon Technologies
Win Source Part Number 235084-BFR183WE6327
Popularity Low
Supply and Demand Status Balance
Family Name BFR183W
Introduction Date December 11, 1996
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BFR183WE6327 CAD Model

Description

BFR183WE6327 - High-Frequency Transistor

The BFR183WE6327 is a NPN silicon high-frequency transistor designed to deliver outstanding performance in RF signal amplification. This robust component offers reliability and efficiency essential for high-frequency amplification applications.

  • Applications:
    • RF signal amplification
    • Telecommunication systems
    • Wireless data transmission
  • Features and Benefits:
    • Low noise figure for improved signal clarity
    • High power gain to amplify weak signals effectively
    • Compact package for easy integration into circuit designs
  • Additional Details:
    • Excellent thermal stability
    • Supports wide frequency range
    • Ideal for low distortion amplification setups

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Shipping Information

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