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Same model may have multiple batches, images only for reference.
IRFH7004TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFH7004TRPBF

Part No IRFH7004TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 40V 100A PQFN 5X6
Datasheet
IRFH7004TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.9V @ 150μA
Max Gate Charge 194nC @ 10V
Max Input Capacitance 6419pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 156W (Tc)
Maximum Rds On at Id,Vgs 1.4 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (5x6)
Dimension 8-VQFN Exposed Pad
Win Source Part Number 122183-IRFH7004TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFH7004TRPBF CAD Model

Description

The Infineon Technologies 122183-IRFH7004TRPBF is an N-Channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 100A at 25°C.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 100A @ 25°C
  • Maximum Power Dissipation: 156W (Tc)
  • Maximum Rds On @ Id,Vgs: 1.4 mOhm @ 100A, 10V
  • Package: 8-PQFN (5x6)
  • Suitable for Use in: Discrete Semiconductor Products
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Gate Charge: 194nC @ 10V
  • Packaging: reel - TR
  • Popularity: Medium
  • Supply and Demand Status: Balance

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Quantity Unit Price Ext. Price
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195+ $0.5192 $101.2440
300+ $0.5030 $150.9000
415+ $0.4867 $201.9805
535+ $0.4705 $251.7175
715+ $0.4219 $301.6585
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