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BFR340L3E6327XTMA1

Part No BFR340L3E6327XTMA1
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR RF NPN 6V TSLP-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 9V
Frequency - Transition 14GHz
Noise Figure (dB Typ @ f) 1.15dB @ 1.8GHz
Gain 17.5dB
Maximum Power Dissipation 60mW
Typical Gain (hFE) (Min) 90 @ 5mA, 3V
Maximum Current Collector 10mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSLP-3
Win Source Part Number 103203-BFR340L3E6327XTMA1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 15k pcs
Ultra Librarian 3D Model Ultra Librarian BFR340L3E6327XTMA1 CAD Model

Description

Product Overview

The BFR340L3E6327XTMA1 RF transistor is crafted to offer consistent performance in high-demand communication environments, providing high gain and low distortion.

  • Application/Project Use: RF oscillators, RF detectors, Broadband amplifiers, Cellular infrastructure, Defense communication systems.
  • Features: High gain, Low distortion, Excellent linearity.
  • Benefits: Improved signal integrity, Enhanced data rates, Reliable long-term operation.
  • This transistor is designed for the next generation of communication technology, ensuring robust performance and dependability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
380+ $0.1526 $57.9880
925+ $0.1252 $115.8100
1,430+ $0.1214 $173.6020
1,970+ $0.1175 $231.4750
2,545+ $0.1136 $289.1120
3,410+ $0.1018 $347.1380
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,100 pieces
MOQ: 380 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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