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BFR340TE6327

Part No BFR340TE6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR RF NPN 6V SC-75
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 9V
Frequency - Transition 14GHz
Noise Figure (dB Typ @ f) 1.15dB @ 1.8GHz
Gain 15dB
Maximum Power Dissipation 60mW
Typical Gain (hFE) (Min) 60 @ 5mA, 3V
Maximum Current Collector 10mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SC-75
Win Source Part Number 79104-BFR340TE6327
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BFR340TE6327 CAD Model

Description

Description

The BFR340TE6327 is a high-performance RF transistor designed for amplification applications in a frequency range up to 2 GHz. Manufactured using state-of-the-art technology, this component delivers low noise figures and excellent linearity, making it ideal for high-frequency amplification and RF front-end designs.

Applications

  • Wireless communication systems
  • RF amplifiers
  • Low noise amplifiers (LNAs)
  • Antenna boosters

Features and Benefits

  • Low Noise Figure: Ensures minimal signal distortion.
  • High Linearity: Provides clear and accurate signal amplification.
  • Wide Frequency Range: Suitable for a variety of RF applications.
  • SMD Package: Promotes easy integration into compact circuits.

Additional Details

The BFR340TE6327 is offered in a surface-mount device package, facilitating automated assembly and efficiency in manufacturing processes. It is a preferred choice for designers aiming to enhance signal integrity and performance in RF systems.

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