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BFR35APE6327HTSA1

Part No BFR35APE6327HTSA1
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR RF NPN 15V SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 15V
Frequency - Transition 5GHz
Noise Figure (dB Typ @ f) 1.4dB to 2dB @ 900MHz to 1.8GHz
Gain 10.5dB to 16dB
Maximum Power Dissipation 280mW
Typical Gain (hFE) (Min) 70 @ 15mA, 8V
Maximum Current Collector 45mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 1023255-BFR35APE6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFR35APE6327HTSA1 CAD Model

Description

The Infineon Technologies BFR35APE6327HTSA1 is an NPN transistor designed for use in a variety of applications.

  • Package: PG-SOT23-3
  • Maximum Current Collector: 45mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
  • Gain (hFE) (Min): 70 @ 15mA, 8V
  • Gain: 10.5dB to 16dB
  • Frequency Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.4dB to 2dB @ 900MHz to 1.8GHz
  • Category: Discrete Semiconductor Products
  • Status: active
  • Mounting: SMD (SMT)
  • Packaging: reel - TR

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Pricing & Ordering

Quantity Unit Price Ext. Price
340+ $0.1709 $58.1060
825+ $0.1404 $115.8300
1,275+ $0.1360 $173.4000
1,760+ $0.1316 $231.6160
2,275+ $0.1272 $289.3800
3,040+ $0.1140 $346.5600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,300 pieces
MOQ: 340 pcs
Order Increment : 1 pcs
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