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Same model may have multiple batches, images only for reference.
BFR949L3E6327 Real Image
Same model may have multiple batches, images only for reference.

BFR949L3E6327

Part No BFR949L3E6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description RF BIPOLAR TRANSISTOR  /  RF Transistor NPN 10V 50mA 9GHz 250mW Surface Mount PG-TSLP-3-1
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Mfr Infineon Technologies
Package Bulk
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 10V
Frequency - Transition 9GHz
Noise Figure (dB Typ @ f) 1dB ~ 2.5dB @ 1GHz
Gain 21.5dB
Power - Max 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA, 6V
Current - Collector (Ic) (Max) 50mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case SC-101, SOT-883
Supplier Device Package PG-TSLP-3-1
RoHS Status Not applicable
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0075
Other Names IFEINFBFR949L3E6327,2156-BFR949L3E6327
Standard Package 15,000
Win Source Part Number 1049179-BFR949L3E6327
Ultra Librarian 3D Model Ultra Librarian BFR949L3E6327 CAD Model

Description

The BFR949L3E6327 is an NPN bipolar transistor designed for use in RF applications.

  • Maximum Power: 250mW
  • Voltage Collector-Emitter Breakdown: 10V
  • Maximum Current Collector: 50mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
  • Gain: 21.5dB
  • Temperature Range: 150°C (TJ)
  • Package: SC-101, SOT-883
  • RoHS Status: Not applicable
  • Alternative parts (cross-reference): PRF947,115; BFQ67W,115; PBR941,215; MMBT5179; 2SC4083T106N; EMX5T2RBFR 949L3 E6327

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