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BFR949T E6327

Part No BFR949T E6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR RF BIP SC-75
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 10V
Frequency - Transition 9GHz
Noise Figure (dB Typ @ f) 1dB to 2.5dB @ 1GHz
Gain 20dB
Maximum Power Dissipation 250mW
Typical Gain (hFE) (Min) 100 @ 5mA, 6V
Maximum Current Collector 35mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SC-75
Win Source Part Number 201178-BFR949T E6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFR949T E6327 CAD Model

Description

BFR949T E6327 RF Transistor

The BFR949T E6327 is a high-performance NPN silicon RF transistor designed for excellent operation in high-frequency domains. Its enhanced specifications make it ideal for advanced communication technologies.

  • Applications:
    • Wireless networks
    • High-frequency RF amplifiers
    • Telecommunication base stations
    • Signal processing units
  • Features and Benefits:
    • High transition frequency for superior performance
    • Minimal noise for clear signal transmission
    • Robust thermal performance ensures durability
    • Space-efficient design
  • Additional Details:
    • SOT-23 package for easy integration
    • Optimized for high power gain
    • Operating frequency up to 6 GHz

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,140+ $0.0508 $57.9120
2,780+ $0.0416 $115.6480
4,290+ $0.0404 $173.3160
5,885+ $0.0393 $231.2805
7,580+ $0.0381 $288.7980
10,000+ $0.0347 $347.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 1140 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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