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BSC014N03LS G

Part No BSC014N03LS G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 34A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 131nC @ 10V
Max Input Capacitance 10000pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 139W (Tc)
Maximum Rds On at Id,Vgs 1.4 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 005245-BSC014N03LS G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC014N03LS G CAD Model

Description

BSC014N03LS G N-Channel MOSFET

The BSC014N03LS G is a highly efficient N-channel MOSFET designed to deliver top-grade performance across various electronic applications. It combines low on-resistance with high switching speeds for optimal energy efficiency.

  • Applications:
    • Load switching applications
    • Voltage regulation modules
    • Electronic braking systems
  • Features & Benefits:
    • Minimal power consumption
    • Enhanced durability and reliability
    • Superior heat dissipation attributes
  • Additional Details:
    • Advanced design for sustained high-performance operations
    • Highly adaptable for integration into complex systems

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.2523 $67.5690
65+ $1.8480 $120.1200
100+ $1.7903 $179.0300
135+ $1.7325 $233.8875
175+ $1.6748 $293.0900
235+ $1.5015 $352.8525
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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