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BSC015NE2LS5IATMA1

Part No BSC015NE2LS5IATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 33A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 12 V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TDSON-8-6
Package / Case 8-PowerTDFN
Base Product Number BSC015
Other Names BSC015NE2LS5IATMA1,SP001288138,448-BSC015NE2LS5IATMA1DKR,448-BSC015NE2LS5IATMA1TR,448-BSC015NE2LS5IATMA1CT
Standard Package 5,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278289-BSC015NE2LS5IATMA1
Ultra Librarian 3D Model Ultra Librarian BSC015NE2LS5IATMA1 CAD Model

Description

The BSC015NE2LS5IATMA1 is an N-channel MOSFET transistor from Infineon Technologies.

  • Series: OptiMOS™
  • Drain-Source Voltage: 25V
  • Maximum Continuous Drain Current @ 25°C: 33A
  • Low On-Resistance: 1.5mOhm @ 30A and 10V
  • Package: 8-PowerTDFN package
  • Power Dissipation: 2.5W @ Ta and 50W @ Tc
  • Gate Charge: 30nC @ 10V
  • Input Capacitance: 2,000pF @ 12V
  • Temperature Range: -55°C to 150°C
  • Classification: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6128 $56.4480
80+ $1.3234 $105.8720
120+ $1.2820 $153.8400
165+ $1.2407 $204.7155
210+ $1.1993 $251.8530
280+ $1.0752 $301.0560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,530 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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