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Same model may have multiple batches, images only for reference.
BSC016N03MSGATMA1 Real Image
Same model may have multiple batches, images only for reference.

BSC016N03MSGATMA1

Part No BSC016N03MSGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A TDSON-8
Datasheet
BSC016N03MSGATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 28A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 173nC @ 10V
Max Input Capacitance 13000pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 125W (Tc)
Maximum Rds On at Id,Vgs 1.6 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 099888-BSC016N03MSGATMA1
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 5k pcs
Ultra Librarian 3D Model Ultra Librarian BSC016N03MSGATMA1 CAD Model

Description

Description:

The BSC016N03MSGATMA1 stands out with its unparalleled on-resistance minimization, making it the go-to solution for applications necessitating optimal power savings and rapid response times.

Features and Benefits:

  • Minimal On-Resistance: Elevates power efficiency.
  • Quick Response Time: Ideal for dynamic power control needs.
  • Thermally Optimized Design: Promotes stability and reliability under load.

Applications:

  • LED Lighting Systems
  • Electric Vehicle Chargers
  • Smart Grid Devices
  • Energy Conversion Technologies

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