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BSC016N04LS G

Part No BSC016N04LS G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 31A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 85μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 12000pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 139W (Tc)
Maximum Rds On at Id,Vgs 1.6 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 122002-BSC016N04LS G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSC016N04LS G CAD Model

Description

Description:

The BSC016N04LS G is designed for high-efficiency and high-reliability applications, featuring low on-resistance and robust thermal management, making it suitable for sophisticated electronic systems.

Features and Benefits:

  • Lowered On-Resistance: Improves energy efficiency and thermal performance.
  • Robust Thermal Management: Extends device and system reliability.
  • Enhanced Electrical Characteristics: Supports a wide range of applications with precision.

Applications:

  • Telecommunications Equipment
  • Consumer Electronics
  • Power Distribution Networks
  • Advanced Robotics

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0758 $53.7900
115+ $0.8827 $101.5105
180+ $0.8551 $153.9180
245+ $0.8275 $202.7375
315+ $0.7999 $251.9685
420+ $0.7172 $301.2240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 95,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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