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BSC030N08NS5

Part No BSC030N08NS5
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 100A 8TDSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.8V @ 95μA
Max Gate Charge 76nC @ 10V
Max Input Capacitance 5600pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 139W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 201382-BSC030N08NS5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSC030N08NS5 CAD Model

Description

BSC030N08NS5

The BSC030N08NS5 is a state-of-the-art power MOSFET delivering exceptional performance in energy-efficient electronic applications. Its design focuses on maximizing conductivity and minimizing thermal resistance.

  • Applications/Projects:
    • Electric Vehicle Electronics
    • Renewable Energy Systems
    • High-frequency switching applications
  • Features and Benefits:
    • Low power loss through minimal RDS(on)
    • High thermal stability
    • Suitable for high-frequency operations
    • Compact design for modern electronics
  • Additional Details:
    • Voltage rating: 80V
    • Enhanced cooling for increased longevity

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8254 $53.6510
130+ $0.7732 $100.5160
205+ $0.7471 $153.1555
290+ $0.6948 $201.4920
375+ $0.6687 $250.7625
470+ $0.6426 $302.0220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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