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BSC097N06NSATMA1

Part No BSC097N06NSATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 46A TDSON-8-6 / N-Channel 60 V 46A (Tc) 2.5W (Ta), 36W (Tc) Surface Mount PG-TDSON-8-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 9.7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 3.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1075 pF @ 30 V
Power Dissipation (Max) 2.5W, 36W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package PG-TDSON-8-6
Case / Package 8-PowerTDFN
Base Product Number BSC097
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number BSC097N06NSATMA1TR,SP001067004,BSC097N06NSATMA1DKR,BSC097N06NSATMA1CT
Standard Package 5,000
Win Source Part Number 1324767-BSC097N06NSATMA1
Ultra Librarian 3D Model Ultra Librarian BSC097N06NSATMA1 CAD Model

Description

The Infineon Technologies BSC097N06NSATMA1 is a N-channel MOSFET transistor, designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current: 46A @ 25°C
  • Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
  • Gate Charge (Qg) (max) @ Vgs: 15 nC @ 10 V
  • Package: PG-TDSON-8-6
  • Power Dissipation (max): 2.5W, 36W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4145 $51.8125
295+ $0.3402 $100.3590
460+ $0.3295 $151.5700
630+ $0.3189 $200.9070
815+ $0.3083 $251.2645
1,090+ $0.2764 $301.2760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 89,000 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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