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BSC109N10NS3GATMA1

Part No BSC109N10NS3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 63A 8TDSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 45μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 2500pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 78W (Tc)
Maximum Rds On at Id,Vgs 10.9 mOhm @ 46A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 1000863-BSC109N10NS3GATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC109N10NS3GATMA1 CAD Model

Description

The Infineon Technologies 1000863-BSC109N10NS3GATMA1 is an N-Channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 63A @ 25°C.

  • Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 63A @ 25°C
  • Maximum On-Resistance: 10.9 mOhm @ 46A and 10V gate-source voltage
  • Gate-Source Threshold Voltage: 3.5V @ 45μA
  • Maximum Input Capacitance: 2500pF @ 50V
  • Package: PG-TDSON-8
  • Mounting: SMD (SMT)
  • Power Dissipation: 78W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2780 $51.1200
85+ $1.1971 $101.7535
130+ $1.1567 $150.3710
190+ $1.0758 $204.4020
245+ $1.0353 $253.6485
305+ $0.9949 $303.4445
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,830 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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