The BSC360N15NS3G is an N-channel power MOSFET from Infineon Technologies, designed for high-efficiency power conversion in various applications. It utilizes advanced OptiMOS™ technology to minimize conduction and switching losses, contributing to high power density and efficiency. This device is well-suited for synchronous rectification in Switched Mode Power Supplies (SMPS), DC-DC converters, and motor control applications.

Applications

• Synchronous Rectification in SMPS
• DC-DC Converters
• Motor Control
• Battery Management Systems
• Power Tools

Features

• Low On-Resistance (RDS(on)) of 36 mΩ
• High Current Capability (ID) of 11 A
• Optimized for High-Frequency Switching
• Logic Level Drive
• Avalanche Rated
• Pb-Free and RoHS Compliant

Benefits

• High Efficiency Power Conversion
• Reduced Power Losses and Heat Dissipation
• Improved Power Density
• Simplified Gate Drive Circuitry
• Enhanced System Reliability
• Environmentally Friendly

Technical Specifications

The BSC360N15NS3G features a drain-source voltage (VDS) of 150 V and a continuous drain current (ID) of 11 A. Its low on-resistance (RDS(on) = 36 mΩ at VGS = 10 V) ensures minimal conduction losses. The device is packaged in a PowerStage 3x3 package, offering excellent thermal performance and compact size. The fast switching speed reduces switching losses, further improving efficiency. The MOSFET is avalanche rated, providing additional protection against voltage transients. It is suitable for high-frequency, high-efficiency power conversion where compact designs are required.