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BSD214SNH6327

Part No BSD214SNH6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description BSD314 - 250V-600V SMALL SIGNAL/
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 2
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 140mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 143 pF @ 10 V
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT363-6-6
Package / Case 6-VSSOP, SC-88, SOT-363
Standard Package 3,000 pcs
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 864687-BSD214SNH6327
Ultra Librarian 3D Model Ultra Librarian BSD214SNH6327 CAD Model

Description

The BSD214SNH6327 is a single N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for discrete semiconductor applications.

  • Series: Infineon Technologies OptiMOS™ 2 series
  • Package: bulk package
  • Vdss: 20V
  • Id: 1.5A @ 25°C
  • Rds On: 140mOhm
  • Mounting: surface mount mounting
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.9150 $67.0250
75+ $1.5720 $117.9000
115+ $1.5223 $175.0645
160+ $1.4738 $235.8080
205+ $1.4241 $291.9405
275+ $1.2774 $351.2850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,010 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

Shipped from HK warehouse
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