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BSD235C L6327

Part No BSD235C L6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 950mA, 530mA
Maximum Rds On at Id,Vgs 350 mOhm @ 950mA, 4.5V
Gate-Source Threshold Voltage 1.2V @ 1.6μA
Max Gate Charge 0.34nC @ 4.5V
Max Input Capacitance 47pF @ 10V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Win Source Part Number 123259-BSD235C L6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSD235C L6327 CAD Model

Description

Features and Benefits

  • High-speed switching performance
  • Low on-state resistance (R<sub>DS (on)) for efficient power management
  • Compact package design
  • Suitable for low voltage applications

Applications

  • DC-DC converters
  • Battery management systems
  • Power supply circuits
  • Load switches

The BSD235C L6327 is a versatile MOSFET that excels in low voltage applications with its remarkable switching performance and minimized on-resistance, making it ideal for compact and efficient circuit designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1640 $58.2200
865+ $0.1340 $115.9100
1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,360+ $0.1224 $288.8640
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 169,500 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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