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Same model may have multiple batches, images only for reference.
BSD314SPEH6327XTSA1
Same model may have multiple batches, images only for reference.

BSD314SPEH6327XTSA1

Part No BSD314SPEH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 1.5A SOT363
Datasheet
BSD314SPEH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 6.3μA
Max Gate Charge 2.9nC @ 10V
Max Input Capacitance 294pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 140 mOhm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 1024362-BSD314SPEH6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSD314SPEH6327XTSA1 CAD Model

Description

The BSD314SPEH6327XTSA1 is a P-Channel MOSFET transistor manufactured by Infineon Technologies.

  • Maximum Drive Voltage: 4.5V
  • Minimum Drive Voltage: 10V
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 1.5A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 6.3μA
  • Maximum Gate Charge: 2.9nC @ 10V
  • Packaging: Surface Mount Device (SMD)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: PG-SOT363-6
  • Maximum Input Capacitance: 294pF @ 15V

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2,245+ $0.1545 $346.8525
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