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Same model may have multiple batches, images only for reference.
BSF053N03LT G Real Image
Same model may have multiple batches, images only for reference.

BSF053N03LT G

Part No BSF053N03LT G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 71A 2WDSON
Datasheet
BSF053N03LT G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 2700pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 5.3 mOhm @ 30A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package MG-WDSON-2, CanPAK M
Dimension 3-WDSON
Win Source Part Number 201399-BSF053N03LT G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSF053N03LT G CAD Model

Description

BSF053N03LT G Features and Benefits

  • Low on-state resistance.
  • High-speed switching capability.
  • Robust design for enhanced durability.

Applications

  • Power management systems.
  • DC-DC converters.
  • Motor control circuits.

The BSF053N03LT G is a high-performance MOSFET designed for a wide range of electronic applications, offering efficient switching and low power loss.

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