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Same model may have multiple batches, images only for reference.
PMDPB80XP,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMDPB80XP,115

Part No PMDPB80XP,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 2.7A HUSON6
Datasheet
PMDPB80XP,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate, 1.8V Drive
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.7A
Maximum Rds On at Id,Vgs 102 mOhm @ 2.7A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 8.6nC @ 4.5V
Max Input Capacitance 550pF @ 10V
Maximum Power Dissipation 485mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN2020-6
Win Source Part Number 1089516-PMDPB80XP,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMDPB80XP,115 CAD Model

Description

The PMDPB80XP,115 is a dual P-channel MOSFET manufactured by Nexperia USA Inc. It features a logic-level gate and a 1.8V drive, making it ideal for use in low-voltage applications.

  • Package: DFN2020-6
  • Maximum Continuous Drain Current: 2.7A @ 25°C
  • Maximum Rds On: 102 mOhm @ 2.7A and 4.5V
  • Maximum Gate Charge: 8.6nC @ 4.5V
  • Popularity: medium
  • Supply and Demand Status: balanced
  • Description: a reliable choice for low-voltage applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.2287 $58.3185
615+ $0.1883 $115.8045
950+ $0.1825 $173.3750
1,310+ $0.1767 $231.4770
1,690+ $0.1709 $288.8210
2,275+ $0.1525 $346.9375
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Availability: 9,005 pieces
MOQ: 255 pcs
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