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BSG0811ND

Part No BSG0811ND
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 19A/41A 8TISON / Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate, 4.5V Drive
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 19A, 41A
Maximum Rds On at Id,Vgs 3 mOhm @ 20A, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 8.4nC @ 4.5V
Max Input Capacitance 1100pF @ 12V
Maximum Power Dissipation 2.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TISON-8
Win Source Part Number 201401-BSG0811ND
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name BSG0811ND
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian BSG0811ND CAD Model

Description

BSG0811ND Features and Benefits

  • Compact footprint for space efficiency.
  • Excellent thermal performance.
  • High-current carrying capability.

Applications

  • Automotive electronics.
  • Power distribution units.
  • Smart home devices.

The BSG0811ND is specifically designed for space-constrained applications, offering efficient thermal management and enhanced current handling in demanding environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7427 $52.2810
70+ $1.4300 $100.1000
110+ $1.3853 $152.3830
150+ $1.3406 $201.0900
195+ $1.2959 $252.7005
260+ $1.1618 $302.0680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
Expected Shipping Date
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