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BSG0811NDATMA1

Part No BSG0811NDATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 19A/41A 8TISON  /  Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 19A, 41A 2.5W Surface Mount PG-TISON-8
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 19A, 41A
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 12V
Power - Max 2.5W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerTDFN
Supplier Device Package PG-TISON-8
Base Product Number BSG0811
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names BSG0811NDATMA1-ND,BSG0811NDATMA1TR,SP001075902,BSG0811NDATMA1CT,BSG0811NDATMA1DKR
Standard Package 5,000
Win Source Part Number 970745-BSG0811NDATMA1
Ultra Librarian 3D Model Ultra Librarian BSG0811NDATMA1 CAD Model

Description

The BSG0811NDATMA1 is a dual N-Channel MOSFET transistor from the OptiMOS™ series of Infineon Technologies.

  • Drain to Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 19A and 41A @ 25°C
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
  • Package: 8-PowerTDFN
  • Mounting Type: Surface Mount Technology (SMT)
  • Application: power supplies, motor control, and DC-DC converters

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.8208 $54.6240
70+ $1.4940 $104.5800
105+ $1.4473 $151.9665
145+ $1.4006 $203.0870
185+ $1.3540 $250.4900
250+ $1.2139 $303.4750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,810 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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