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Same model may have multiple batches, images only for reference.
BSL306NH6327XTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSL306NH6327XTSA1

Part No BSL306NH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 2.3A 6TSOP
Datasheet
BSL306NH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate, 4.5V Drive
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.3A
Maximum Rds On at Id,Vgs 57 mOhm @ 2.3A, 10V
Gate-Source Threshold Voltage 2V @ 11μA
Max Gate Charge 1.6nC @ 5V
Max Input Capacitance 275pF @ 15V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSOP6-6
Win Source Part Number 128633-BSL306NH6327XTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSL306NH6327XTSA1 CAD Model

Description

BSL306NH6327XTSA1

The BSL306NH6327XTSA1 is a versatile MOSFET that caters to a variety of electronic applications. Known for its reliability, it is commonly utilized in telecommunications, computing, and renewable energy projects.

  • Applications: Battery management, inverter circuits, power amplifiers
  • Features: Robust construction, high current tolerance, ESD protection
  • Benefits: Enhanced reliability, longer operational lifespan, reduced system downtime

This component's design ensures it can handle demanding environments with ease.

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