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Same model may have multiple batches, images only for reference.
SSM3J35MFV,L3F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3J35MFV,L3F

Part No SSM3J35MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 0.1A VESM
Datasheet
SSM3J35MFV,L3F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 100mA (Ta)
Max Input Capacitance 12.2pF @ 3V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 8 Ohm @ 50mA, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VESM
Dimension SOT-723
Win Source Part Number 097783-SSM3J35MFV,L3F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3J35MFV,L3F CAD Model

Description

The Toshiba Semiconductor and Storage SSM3J35MFV,L3F is a P-channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 100mA @ 25℃.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 100mA @ 25℃
  • Maximum Power Dissipation: 150mW (Ta)
  • Maximum Rds On: 8 Ohm @ 50mA, 4V
  • Mounting Technology: SMD (SMT)
  • Dimension: SOT-723
  • Maximum Input Capacitance: 12.2pF @ 3V
  • Category: Discrete Semiconductor Products
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
425+ $0.1190 $50.5750
1,025+ $0.0976 $100.0400
1,590+ $0.0946 $150.4140
2,190+ $0.0915 $200.3850
2,825+ $0.0885 $250.0125
3,785+ $0.0793 $300.1505
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 824 pieces
MOQ: 425 pcs
Order Increment : 1 pcs
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