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Same model may have multiple batches, images only for reference.
RJK4514DPK-00#T0 Real Image
Same model may have multiple batches, images only for reference.

RJK4514DPK-00#T0

Part No RJK4514DPK-00#T0
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 450V 22A TO3P  /  N-Channel 450 V 22A (Ta) 150W (Tc) Through Hole TO-3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas Electronics America Inc
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 450 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-220-3 Full Pack
Base Product Number RJK4514
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1
Win Source Part Number 998277-RJK4514DPK-00#T0
Ultra Librarian 3D Model Ultra Librarian RJK4514DPK-00#T0 CAD Model

Description

The Renesas Electronics America RJK4514DPK-00#T0 is a high-performance MOSFET that is designed to provide reliable performance in a variety of applications.

  • Drain to Source Voltage: 450 V
  • Continuous Drain Current: 22A
  • Rds On: Low
  • Input Capacitance: 1800 pF
  • Temperature Range: -40°C to 150°C

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