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BSM50GB170DN2HOSA1
Same model may have multiple batches, images only for reference.

BSM50GB170DN2HOSA1

Part No BSM50GB170DN2HOSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Modules
Description IGBT 1700V 72A 500W MODULE / Trans IGBT Module N-CH 1700V 72A 500000mW 7-Pin 34MM-1 Tray
Datasheet
BSM50GB170DN2HOSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies Industrial Power and Controls Americas
Part Status Obsolete(EOL)
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Maximum) 1700V
Current - Collector (Ic) (Maximum) 72A
Power - Max 500W
Vce(on) (Maximum) @ Vge, Ic 3.9V @ 15V, 50A
Input Capacitance (Cies) @ Vce 8nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature Range 150°C (TJ)
Mounting Chassis Mount
Package Module
Manufacturer Package Module
Win Source Part Number 774978-BSM50GB170DN2HOSA1
Popularity Medium
Supply and Demand Status Limited
Family Name BSM50GB170DN2
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BSM50GB170DN2HOSA1 CAD Model

Description

The BSM50GB170DN2HOSA1 is a half-bridge module manufactured by Infineon Technologies.

  • Type: Discrete semiconductor product
  • Package: Module
  • Mounting: Chassis
  • Current-Collector (Ic): 72A (Maximum)
  • Voltage-Collector Emitter Breakdown: 1700V (Maximum)
  • Vce(on): 3.9V (Maximum) @ Vge, Ic of 15V, 50A
  • Input Capacitance: 8nF @ Vce of 25V
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Limited

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