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BSO064N03S G

Part No BSO064N03S G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A 8DSO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 50μA
Max Gate Charge 28nC @ 5V
Max Input Capacitance 3620pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.56W (Ta)
Maximum Rds On at Id,Vgs 6.4 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-DSO-8
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 201405-BSO064N03S G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSO064N03S G CAD Model

Description

Product Description

The BSO064N03S G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for optimal efficiency and reliability. Engineered for a variety of applications, this component excels in delivering top-notch performance in power systems.

Features and Benefits

  • Low On-Resistance for efficient power management
  • Fast switching capabilities, ensuring quick response times
  • Robust design offering reliable thermal performance
  • Designed for high efficiency in power conversion tasks

Applications & Projects

  • DC-DC Converter Circuits
  • Battery Management Systems
  • Motor Drives and Controllers
  • Switch Mode Power Supplies (SMPS)

Additional Details

The BSO064N03S G's ability to function at high speeds makes it an ideal choice for projects requiring tight control and efficiency. Its robust construction ensures it can withstand thermal and electrical stress, enhancing the longevity of your electronic designs.

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