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BSO083N03MSGXUMA1

Part No BSO083N03MSGXUMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A 8DSO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 2100pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.56W (Ta)
Maximum Rds On at Id,Vgs 8.3 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-DSO-8
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1024414-BSO083N03MSGXUMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSO083N03MSGXUMA1 CAD Model

Description

The Infineon Technologies BSO083N03MSGXUMA1 is an N-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 11A @ 25°C.

  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 27nC @ 10V
  • Maximum Input Capacitance: 2100pF @ 15V
  • Package: PG-DSO-8
  • Power Dissipation: 1.56W (Ta)
  • Maximum Rds On @ Id,Vgs: 8.3 mOhm @ 14A, 10V
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2950 $59.0000
480+ $0.2421 $116.2080
740+ $0.2346 $173.6040
1,020+ $0.2270 $231.5400
1,320+ $0.2195 $289.7400
1,765+ $0.1967 $347.1755
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 200 pcs
Order Increment : 1 pcs
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