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BSO130P03S H

Part No BSO130P03S H
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 9.2A 8DSO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.2V @ 140μA
Max Gate Charge 81nC @ 10V
Max Input Capacitance 3520pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 1.56W (Ta)
Maximum Rds On at Id,Vgs 13 mOhm @ 11.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package P-DSO-8
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 131208-BSO130P03S H
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSO130P03S H CAD Model

Description

BSO130P03S H - P-Channel MOSFET

The BSO130P03S H is a highly efficient P-channel MOSFET designed for reverse polarity switching and load switching applications. Its advanced features and low on-resistance make it an ideal choice for conserving energy in portable electronic devices.

  • Applications:
    • Load Switching
    • Reverse Polarity Protection
    • Battery-Powered Devices
  • Features and Benefits:
    • Low on-state resistance for superior conductivity.
    • Compact form factor enabling versatile application usage.
    • Stable performance across voltage variations.
  • Additional Details:
    • Packaging: SOT-223
    • Voltage Rating: 30V
    • Current Rating: 130A

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,100 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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