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BSO220N

Part No BSO220N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6A 8DSO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A
Maximum Rds On at Id,Vgs 22 mOhm @ 7.7A, 10V
Gate-Source Threshold Voltage 2.1V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 800pF @ 15V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-DSO-8
Win Source Part Number 237268-BSO220N
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSO220N CAD Model

Description

Designed for high-frequency and high-switching applications, the BSO220N MOSFET is the perfect solution for developers targeting efficiency and reliability. Its lightweight design and thermal efficiency make it ideal for dynamic electronic systems.

  • Applications:
    • Inverters for solar energy systems
    • Telecommunication hardware
    • Switch-mode power supplies
    • Features and Benefits:
      • Compact and lightweight, enabling easy integration into mobile designs
      • High thermal conductivity supports consistent performance
      • Fast recovery ensures minimal downtime in circuit operation

      Additional Details: The BSO220N exhibits exceptional operational stability, which ensures reduced noise and enhanced signal integrity across electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9633 $57.7980
150+ $0.7912 $118.6800
230+ $0.7658 $176.1340
315+ $0.7415 $233.5725
405+ $0.7173 $290.5065
540+ $0.6422 $346.7880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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