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BSO615CGXUMA1

Part No BSO615CGXUMA1
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description MOSFET N/P-CH 8-SOIC / Mosfet Array 60V 3.1A (Ta), 2A (Ta) 2W (Ta) Surface Mount PG-DSO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series SIPMOS®
Package Tape & Reel
Product Status Last Time Buy
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 3.1A (Ta), 2A (Ta)
Rds On (Max) @ Id, Vgs 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA, 2V @ 450µA
Gate Charge (Qg) (Max) @ Vgs 22.5nC @ 10V, 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V, 460pF @ 25V
Power - Max 2W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package PG-DSO-8
Base Product Number BSO615
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1353632-BSO615CGXUMA1
Ultra Librarian 3D Model Ultra Librarian BSO615CGXUMA1 CAD Model

Description

The BSO615CGXUMA1 is a MOSFET array from Infineon Technologies.

  • Series: SIPMOS®
  • Operating Temperature: -55°C to 150°C
  • Drain-to-Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 3.1A @ 25°C
  • On-Resistance (Rds On): 110mOhm @ 3.1A, 300mOhm @ 2A
  • Gate Type: Logic-Level
  • Gate Charge (Qg): 22.5nC @ 10V
  • Package: 8-SOIC
  • Mounting Type: Surface Mount

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9324 $52.7832
42+ $2.4061 $101.0562
65+ $2.3309 $151.5085
89+ $2.2557 $200.7573
115+ $2.1805 $250.7575
154+ $1.9549 $301.0546
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Availability: 6,170 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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