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BSO615N G

Part No BSO615N G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 2.6A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.6A
Maximum Rds On at Id,Vgs 150 mOhm @ 2.6A, 4.5V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 380pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-DSO-8
Win Source Part Number 131863-BSO615N G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSO615N G CAD Model

Description

Overview of BSO615N G

The BSO615N G is a high-performance N-channel MOSFET, designed to handle demanding applications. Renowned for its reliability, this MOSFET offers excellent thermal stability and is built to withstand high power environments.

Features and Benefits

  • Low On-Resistance: Ensures minimal power loss and high efficiency.
  • Fast Switching Speed: Allows for high-frequency applications.
  • Robust Design: Suitable for high power and high temperature conditions.

Applications

  • DC-DC Converters
  • Switching Applications
  • Power Management Systems

The BSO615N G is an ideal choice for engineers seeking a dependable solution for power management and switching tasks.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.5640 $53.4600
30+ $3.3384 $100.1520
47+ $3.2256 $151.6032
67+ $3.0000 $201.0000
87+ $2.8873 $251.1951
109+ $2.7745 $302.4205
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,050 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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